Photonic integrated circuits based on quantum cascade structures

ABSTRACT

Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.

RELATED APPLICATION(S)

This application claims the benefit of U.S. Provisional Application No.61/675,864, filed on Jul. 26, 2012, and U.S. Provisional Application No.61/782,639, filed on Mar. 14, 2013. The entire teachings of the aboveapplications are incorporated herein by reference.

GOVERNMENT SUPPORT

The invention described herein was developed jointly by MIT LincolnLaboratory and Eos Photonics under Navy STTR program N11A-011-0089. Thegovernment has certain rights in the invention.

BACKGROUND

Photonic integrated circuits (PICs) based on near-infrared (NIR) lightinclude active and passive portions of a single chip and are used toproduce off-the-shelf integrated devices. NIR PICs typically incorporatediode lasers, which are bipolar devices that utilize interbandtransitions between the valence and conduction bands. Diode lasersconsist of both n- and p-type layers, and the emission wavelength isdirectly related to the bandgap of the active regions in thesemiconductor structure. PICs that utilize diode lasers may befabricated by increasing a bandgap of one or more semiconductor layersto minimize inter-band transitions in a passive waveguide region.Alternatively, NIR PICs may be fabricated by etching away the originalwaveguide from a region intended to be passive, followed by regrowingnew layers having a larger bandgap than the laser wavelength and a lowfree-carrier concentration.

In contrast to diode lasers, quantum cascade lasers (QCLs) and otherquantum cascade (QC) devices are unipolar devices that utilizeintra-band transitions between subbands within the conduction band. Theemission photon energy is significantly lower than the energy bandgap ofthe semiconductor materials that comprise the QC structure. QC devicesdo not rely on inter-band transitions, and they typically do not utilizetwo different types of doping (nand p-type).

SUMMARY

Fabrication methods that have been used for near infrared (NIR) photonicintegrated circuits (PICs) are inapplicable or undesirable as to quantumcascade (QC) structures. For example, increasing the bandgap energybetween a conduction band and a valence band does not necessarilyprevent inter-subband transitions and accompanying losses within theconduction band for QC structures. Moreover, NIR PICs fabricated byincreasing the bandgap in the passive portion still suffer from lossesdue to free-carrier absorption in the n- and p-doped layers of thepassive portion.

Further, the etching and re-growth method of creating PICs in the NIR isvery difficult to implement and, therefore, costly. Also, it isdifficult to achieve low optical coupling losses between the active andpassive waveguide portions because of potential mismatches in layerthicknesses and compositions.

The present invention relates to PICs based on QC structures, as well asto corresponding methods of integrating QCLs and otherQC-structure-based active devices with each other or with passivewaveguides and other passive devices. Low optical losses may be achievedby significantly reducing a density of free charge carriers in at leastone layer forming a QC structure. Depletion of free charge carriers maybe accomplished by implanting ions into a QC structure where it isdesired to be passive. Low electrical conductivity may also result fromimplanting the ions.

In a first embodiment, a device includes an integrated multi-layersemiconductor structure with active and passive portions. The structureincludes a wave confinement region that includes a quantum cascade (QC)layer, and the wave confinement region extends into the active andpassive portions of the multi-layer structure. The QC layer in the waveconfinement region in the active portion of the structure has a densityof free charge carriers sufficient to produce optical gain in awavelength spectrum. The QC layer in the wave confinement region in thepassive portion of the structure is substantially devoid of free chargecarriers and has low loss in the same wavelength spectrum. Other layersof the structure, whether inside or outside the wave confinement regionof the structure, can likewise be substantially devoid of free chargecarriers for lower loss.

The QC layer can be substantially devoid of free charge carriers due toions implanted therein. Implanted ions can include, for example, ions ofHydrogen, Iron, Helium, Oxygen, Chromium, Cobalt, Nickel, Titanium,Vanadium, Silicon, Sulfur, Selenium, Tellurium, Tin, Zinc, and Carbon.Alternatively, diffused atoms may be included in the QC layer, and theQC layer's quality of being substantially devoid of free charge carriersin the wave confinement region in the passive portion of the structuremay be a consequence of the diffused atoms. Example densities of freecharge carriers in the QC layer in the passive portion include densitiesless than about 10¹⁵ cm⁻³ and densities less than about 10¹⁰ cm⁻³. Wheresubstantially devoid of carriers, the QC layer can include energeticallydeep trap levels, and these trap levels can result in the structuralquality of being substantially devoid of free charge carriers.Alternatively, atoms can compensate for a free carrier concentration.Atoms can be diffused atoms, for example. The passive portion of themulti-layer structure can be or include a waveguide, a router, asplitter, a combiner, a coupler, a phase shifter, a multiplexer, aninterferometer, a filter, a modulator, a switch, or a resonator, forexample.

In turn, the active portion of the structure can be or include a laser,a distributed feedback laser, an amplifier, a master-oscillator poweramplifier, a switch, a modulator, a phase shifter, or a detector, forexample. The active portion can be active, for example, in themid-infrared wavelength spectrum, and the passive portion can be passivein the same spectrum. In this description, the mid-infrared wavelengthspectrum is considered to be between approximately 3 and 20 microns.

In a second embodiment, a method includes forming an integratedmulti-layer semiconductor structure including a wave confinement regionincluding a quantum cascade layer with a density of free charge carrierssufficient to produce optical gain in a wavelength spectrum. The methodalso includes configuring a portion of the wave confinement region to bea passive portion having low loss in the wavelength spectrum bysubstantially depleting at least the QC layer in the portion of freecharge carriers. A remaining portion of the wave confinement regionother than the passive portion comprises an active portion of the waveconfinement region. The wavelength spectrum for optical activity orpassivity can be in the mid-infrared, for example.

Ions can be implanted into the passive portion to substantially depletethe passive portion of free charge carriers. The ions can include ionsof, for example, Hydrogen, Iron, Helium, Oxygen, Chromium, Cobalt,Nickel, Titanium, Vanadium, Silicon, Sulfur, Selenium, Tellurium, Tin,Zinc, and Carbon. Depletion of free charge carriers can extend tocarrier densities of less than about 10¹⁵ cm⁻³, or less than about 10¹⁰cm⁻³, for example. As one alternative to ion implantation, atoms may bediffused into the passive portion to carry out the depletion.

The passive portion of the wave confinement region can be configured toinclude deep trap levels to trap the free charge carriers.Alternatively, the portion is converted to a passive portion byintroducing ions to compensate for the initial free-carriers and resultin a net reduction in the free-carrier concentration.

The multi-layer structure can have active and passive portionscorresponding, respectively, to the active and passive portions of thewave confinement region. The active portion of the structure can be orinclude a laser, a distributed feedback laser, an amplifier, amaster-oscillator power amplifier, a switch, a modulator, a phaseshifter, or a detector, for example. The passive portion of themulti-layer structure can be or include a waveguide, a router, asplitter, a combiner, a coupler, a phase shifter, a multiplexer, aninterferometer, a filter, a modulator, a switch, or a resonator, forexample.

Additional layers such as substrate, lower cladding, and upper claddingcan also be formed as part of the multi-layer structure. Further, otherlayers such as waveguiding, plasmon, and contact layers can be formed.Where a contact layer is formed, it may be formed following forming theupper cladding layer, for example. A part of the contact layer in thepassive portion of the structure can be removed by etching, for example,and a low-loss dielectric material can optionally be deposited onto thestructure to replace all or part of the removed layer. In addition tothe contact layer, a part of the upper cladding layer in the passiveportion of the structure may also be removed, and a low-losssemiconductor material can be grown to replace all or part of theremoved layers.

Protons or other ions can be implanted into other layers of thestructure other than the quantum cascade layer. Lower cladding and uppercladding layers in the passive portion of the multi-layer structure, forexample, may be ion-implanted to deplete free charge carriers and reduceoptical losses due to those layers. Ion implantation may be performed instages, and these stages may be interspersed with stages of structureformation. For example, ions can be implanted into the lower claddingand quantum cascade layers in the passive portion of the structure,followed by forming the upper cladding and contact layers. For example,one ion implantation stage can be completed after forming the lowercladding and quantum cascade layers, and additional ions may beimplanted after forming the upper cladding and/or contact layers.

In a third embodiment, a method includes forming an integratedmulti-layer semiconductor structure having a wave confinement regionincluding a quantum cascade layer formed to be substantially devoid offree charge carriers and have low loss in a wavelength spectrum. Themethod also includes configuring a portion of the wave confinementregion to be an active portion by increasing a density of free chargecarriers in the QC layer in the portion of the wave confinement regionto a value sufficient to produce optical gain in the layer in thewavelength spectrum. A remaining portion of the wave confinement regionother than the active portion is a passive portion of the waveconfinement region.

The multi-layer structure can include one or more of the passive deviceslisted for the embodiments summarized above, for example. Further, theactive portion of the wave confinement region can correspond to anactive portion of the structure, which can be configured to be operableas one or more of the active devices summarized above. Increasing thedensity of free charge carriers can include ion implantation or atomdiffusion, for example.

In a fourth embodiment, a method includes forming an integratedmulti-layer semiconductor structure including a wave confinement regionhaving a QC layer, the wave confinement region having first and secondportions with an initial density of free charge carriers in the QClayer. The method also includes modifying the initial density of freecharge carriers in the QC layer in the second portion of the waveconfinement region to be substantially different from the initialdensity. Modifying the initial density can include raising or loweringthe initial density, and this can be done by ion implantation, forexample.

The initial density of free charge carriers can be sufficiently low thatthe formed first and second portions of the wave confinement region arepassive in a wavelength spectrum, and the initial density can beincreased in the second portion to a level sufficient to produce opticalgain in the QC layer in the portion in the wavelength spectrum.Alternatively, the initial density can be high enough to produce opticalgain in the QC layer, and the initial density can be decreased in thesecond portion to a level low enough to render the second portionpassive, for example.

As a third alternative, the initial density of free charge carriers canbe sufficiently high to produce an initial optical gain in the QC layer,and the density can be modified enough to be able to produce a modifiedlevel of optical gain in the second portion, the modified gain differingsubstantially from the initial gain. The third alternative can be used,for example, where the first portion includes a quantum cascade lasergain medium and the density is modified in the second portion to renderthe QC layer in the second portion operable as a quantum cascadeamplifier gain medium with a gain that differs from that of the quantumcascade laser gain medium.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing will be apparent from the following more particulardescription of example embodiments of the invention, as illustrated inthe accompanying drawings in which like reference characters refer tothe same parts throughout the different views. The drawings are notnecessarily to scale, emphasis instead being placed upon illustratingembodiments of the present invention.

FIGS. 1A and 1B show schematic energy band diagrams for diode andquantum cascade structures, respectively.

FIG. 2A is a top view of an example photonic integrated circuit based onquantum cascade structures.

FIG. 2B is a schematic cross-sectional profile view of a junctionbetween active and passive portions of the example photonic integratedcircuit based on the quantum cascade structure.

FIGS. 2C and 2D are schematic cross-sectional views of active andpassive portions, respectively, of the example photonic integratedcircuit based on the quantum cascade structure.

FIG. 3 is a graph that plots ion-implantation penetration depth ofprotons and Iron into Indium phosphide as calculated using software.

FIG. 4 shows an example implantation schedule for implanting Iron ionsinto Indium phosphide.

FIG. 5 shows a structure of a typical Indium phosphide-based quantumcascade laser structure that is grown on n-type Indium phosphide, andoptical mode is plotted.

FIG. 6 is a graph plotting calculated absorption coefficients in Indiumphosphide as a function of electron concentration for two wavelengths.

FIGS. 7A-D show example processing sequences and corresponding schematicdiagrams for quantum cascade structures with active and passiveportions.

DETAILED DESCRIPTION OF THE INVENTION

A description of example embodiments of the invention follows.

The teachings of all patents, published applications and referencescited herein are incorporated by reference in their entirety.

For simplicity, the term quantum cascade (QC) structure is used in someof the descriptions that follow. It should be understood that QC or QCstructure should be interpreted generally to be a multi-layer structurethat is a source of radiation, typically mid-infrared (MIR) radiation,that comprises a quantum-cascade (QC) layer and could refer to a laser,an amplifier, or any other active QC structure capable of QC-type gaingiven a high enough density of free charge carriers present in the QClayer. Also, a “QC layer” may have many sublayers, even hundreds ofsublayers, for example.

Furthermore, emphasis herein is placed on Indium phosphide (InP)-basedQC lasers and other QC structures since these are the most common type.However, the discussion is equally applicable to QC devices based onother semiconductor material systems, such as Gallium Arsenide (GaAs),Gallium Antimonide (GaSb), and so forth.

In the descriptions that follow, “concentration” may be usedinterchangeably with “density” as to free charge carriers and implantedions. Both “concentration” and “density” may be used to denote a numberof free charge carriers or implanted ions per unit volume.

In the descriptions that follow, “cladding” is used to denote a materialused to assist in confinement of the optical mode in a semiconductorstructure. In some embodiments, a cladding layer is adjacent to anactive QC layer, while in other embodiments, the cladding layer is notadjacent to the QC layer, and there can be one or more intermediatelayers such as waveguiding layers.

Photonic Integrated Circuits

Photonic integrated circuits (PICs) are very important off-the-shelfcomponents for optical telecommunication. In general, these devices arecomposed of several integrated elements with different functionalities(such as lasers, amplifiers, detectors, wavelength combiners, powersplitters, modulators, couplers, switches, low-loss Bragg reflectors,and so forth) fabricated monolithically on a single semiconductor wafer.Passive waveguides, or regions with low optical losses, are essential tothe realization of PICs since they connect the different on-chipelements, for example. PICs have been developed so far almostexclusively at telecommunication wavelengths, i.e., at λ˜1.55 μm on InPor silicon-on-insulator (SOI) wafers.

Diode Laser PICs and Traditional Methods for Fabricating PICs

Diode lasers are bipolar devices that utilize interband transitionsbetween the valence and conduction bands. Their emission wavelength isin general in the near-infrared (NIR), at wavelengths shorter than 3 μm.Diode lasers consist of both n- and p-type layers, and the emissionwavelengths of a diode lasers is directly related to the bandgap of theactive regions in the semiconductor structure. PICs that utilize diodelasers are usually fabricated by increasing the bandgap of one or moresemiconductor layers to minimize the inter-band transitions since theseusually result in optical absorption that is significantly larger thanthe free-carrier absorption component of the optical loss. Becausefree-carrier absorption depends on the square of the wavelength, thisloss mechanism does not in general play a significant roll in NIR PICscompared to MIR PICs, for which the wavelength range is typicallybetween 4 to 14 μm.

PICs based on diode lasers in the near-infrared (NIR) (see, e.g.,Coldren et al., Proc. Indium Phosphide and Related Materials (IPRM),paper PLE1, Princeton, N.J., May 7-11, 2006) generally rely on ionimplantation to shift the bandgap (see, e.g., Wan et al., Nucl. Instr.Meth. Phys. Res. B, 106 461 (1995); Elman et al., U.S. Pat. No.5,238,868 and the references therein). In this particular case, ionimplantation and the subsequent thermal annealing of the sample resultsin quantum-well intermixing, or compositional disordering andintermixing of the two irradiated materials forming the barrier and thequantum wells of the heterostructure. This leads to a controllable andspatially selective increase of the energy bandgap in some layers of theimplanted heterostructure compared to the bandgap of the unmodifiedmaterial. This spatially selective increase of the energy bandgap isgenerally large enough to render a waveguide, or a region formed in theimplanted region, relatively transparent to the light emitted by a laserformed from the un-implanted material due to a reduction in theinter-band absorption.

Another method of creating PICs in the NIR involves material regrowth,or etching away the original waveguide and re-growing new layers havinga larger bandgap than the laser wavelength and also having afree-carrier density that is as low as possible to limit losses. Thisapproach, however, is very difficult and costly to implement. A furtherproblem with this approach is the difficulty of achieving low opticalcoupling losses between the laser and passive waveguide since anymismatch in layer thicknesses and compositions will result in an opticalcoupling loss.

FIG. 1A is a schematic energy band diagram 150 a for a diode laser. Asemiconductor material represented in the diode diagram 150 a includes aconduction energy band 151 a containing an electron 153 a and a valenceband 152 a containing a hole 154. A transition 155 a from the conductionband 151 a to the valence band 152 a gives rise to emission of a photon.

Mid-Infrared Photonic Integrated Circuits

QC gain devices such as QC lasers, in contrast to diode lasers, areunipolar devices that utilize intra-band transitions (or, equivalently,intersubband transitions) within the conduction band. The emissionphoton energies of QC structures are significantly lower (from ˜88 meVto 310 meV, which corresponds to ˜4 to 14 μm) than the energy bandgap ofthe semiconductor materials that comprise the QC structure. Unlike diodelasers, QC devices do not involve inter-band transitions nor twodifferent types of doping (n- and p-type). The approach being disclosedin this application is applicable to light sources that are based onintra-band transitions. These light sources include QC light sources andother QC devices and can be MIR light sources.

The QC energy diagram 150 b similarly contains a conduction band 151 b,valence band 152 b, and electron 153 b. However, in the quantum cascadestructure, the transition 155 b giving rise to photon emission isbetween energy levels 156 a and 156 b that are both within theconduction band 151 b. In the diagram 150 b, it can be seen that thereare two regions where the conduction and valence band edges 151 b and152 b are closer together in energy. These two regions correspond to twolayers of similar energy band properties within a QC structure, and thetwo similar layers are separated by a different layer with energybandgaps that are greater. In general, a QC layer or structure willinclude many of these alternating layers, such as many hundreds, forexample.

FIG. 1B shows a QC energy diagram 150 b that also contains a deeptrapping energy level 157 that can be created between the conduction andvalence bands by, for example, ion implantation using ions such as Ironor Protons. The energetically deep trapping energy level 157 may also bereferred to as a deep trap level. Deep trap levels are not applicablefor monolithic integration of diode structures. However, the inventorshave discovered that creating deep trap levels in QC structures by, forexample, ion implantation, can result in QC-based PICs with low opticalloss in the implanted regions.

The development of PICs in the MIR is very promising for a number ofapplications. An example of MIR PIC useful for spectroscopicapplications such as gas sensing consists of a monolithic broadbandlaser source comprising an on-chip beam combiner integrated with passivelow-loss waveguides and an array of MIR, single mode QC lasers (QCLs).Every laser element in this example QCL array would preferentially be adistributed feedback (DFB) QCL emitting at a different wavelength toform, as a whole, a broadband source having an emission spectrumoverlapping with several absorption features of a gas mixture, forexample. The purpose of the beam combiner is to combine the individualoutputs of the different active QCL array elements into a single outputto simplify the optics needed to collimate the laser source.

Another example is high-power applications such as infrared (IR)countermeasure. High-power applications would also benefit from thedevelopment of a similar integrated laser source. However, in the caseof some high-power applications, each element in the laser array wouldbe optimized for high output power instead of broadband spectralcoverage.

FIG. 2A shows a top view of an example MIR PIC that includes an array ofDFB QCLs 101 optically coupled to QC power amplifiers 111 in amaster-oscillator power amplifier (MOPA) configuration. The outputs ofthe power amplifiers 111 are connected to low-loss waveguides 121, 131,and 133 that collectively form a router capable of bringing the multipleoutputs in very close proximity to each other at an output interface135. Outside of the output interface 135, the output beams 137 are stillin close proximity, and the output beams 137 may overlap and/or befocused by additional optical elements (not shown) as required.

Ions 129 are implanted into the low-loss waveguides 121, 131, and 133.The implanted ions 129 substantially deplete a QC layer (not shown) inthe waveguides 121, 131, and 133. As used in this application, “ions” or“implanted ions” refers to ionized atomic or molecular species that havebeen introduced into the semiconductor structure. The exact electronicnature of the ions, or whether they can still be considered “ions” onceimplanted is unimportant for purposes of this application. “Implantedions” or “ions” simply refer to atoms that are introduced into thesemiconductor structure after their initial growth.

The previously given examples represent only one class of PICs thatwould be enabled by the ability to integrate QC structures with passivewaveguides. A range of other novel functionalities can be realized.Low-loss integrated optical elements and novel functionalities include,for example, phase shifters, arrayed waveguide multiplexers, opticalrouters, optical couplers, Mach-Zehnder interferometers, filters,modulators, switches, resonators, splitters, etc.

In the MIR wavelength region, the optical losses originate mainly from(i) free-carrier absorption in doped semiconductor layers and (ii)inter-subband absorption, i.e., optical transitions between electroniclevels in quantum wells, if the waveguide includes a heterostructure.Unlike NIR diode lasers in QC structures, the bandgap of thesemiconductor materials used to create the chip do not play asignificant role in terms of optical losses. Both of the above types oflosses are proportional to the free carrier concentration in the layers.

It is possible to fabricate low-loss MIR passive waveguides alongsideactive QC structures using the re-growth method described above, inwhich the original waveguide is etched away and replaced with new layershaving a free-carrier concentration as low as possible to limit losses.The material for the cladding layers is preferentially Fe-doped InPsince the Fe ions form deep traps for the electrons. This reduces byorders of magnitude the carrier concentration even at temperaturessignificantly above room temperature and transforms the layer into anelectrically insulating and optically transparent region as long as theconcentration of deep trap levels is higher than the background dopingof InP. Similarly, the core of the passive waveguide is preferentiallycomposed of a material that has a higher refractive index than InP, suchas InGaAs or InAlAs, and also doped with an impurity such as Fe tocompensate the background doping.

In terms of the fabrication steps required, this re-growth approach isvery similar to the one used in NIR PICs—only the type of materials thatare re-grown changes. This approach also suffers from the samedisadvantages as it does for NIR PICs. In particular, it requires atleast one extra-growth step, which adds significantly to the fabricationcosts. Moreover, it is difficult to ensure that the two waveguide coresalign at the junction between the QCL and the passive waveguide. Thisresults in undesirable coupling losses when light transfers from the QCLto the passive waveguide.

Novel Method of Using Ion-Implantation to Fabricate MIR PICs

Embodiments of this invention can be based on the implantation of ions,preferentially protons (H) and/or Iron (Fe), into a passive portion ofthe QC structure to form a self-aligned, low-loss passive waveguide (orwave confinement region) for MIR PICs. The implanted ions createenergetically deep traps in n-doped semiconductor layers that reduce theconcentration of free charge carriers, or mobile electrons. An exampleof an energetically deep trapping level is deep trap level 157 shown inFIG. 1. Low optical losses and electrical insulation can be achieved byimplanting enough ions to reduce the carrier concentration below theinitial concentration to a level that is preferably <˜10¹⁵ cm⁻³.

Ion implantation was demonstrated experimentally to lead to significantreduction of electron concentration in both bulk semiconductor andheterostructures, in particular the gain medium of QCLs. The inventorshave discovered that this method significantly facilitates theintegration of passive photonic elements with active QC elements such asQCLs and QC amplifiers to create MIR PICs. This will be described inmore detail in what follows.

FIG. 2B shows schematically a cross section of the junction between thepower amplifier 111 and the passive waveguide 121 (also shown in FIG.2A) after processing. Both integrated elements 111 and 121 arefabricated on a single substrate 116. In this embodiment, the lightgenerated in the amplifier 111 travels from the left to the right ofFIG. 2B. The active QC element 111 in general includes a QC layer 113,which acts as the waveguide core, and two cladding layers 114, 115 thatare typically low-doped InP (doping level between: 1×10¹⁶ cm⁻³ and5×10¹⁷ cm⁻³). Electrical connection to the active element 111 isprovided by a highly doped InP layer 117 (doping: 1×10¹⁸ cm⁻³ or higher)and a metal contact 118.

The QC gain medium 113 may also be referred to as a QC layer or activelayer. The gain medium 113 may include many sub-layers of alternatingmaterials such as InGaAs and InAlAs or other alternating materials. Itshould be understood that reference to a QC layer or active layer can beused to refer to a grouping of such sub-layers. The active and passiveelements 111, 121 can also be referred to, respectively, as active andpassive portions of the multi-payer structure.

In this embodiment shown in FIG. 2B, the passive waveguide 121 includesthe same cladding layers 114, 115 that form the waveguide of the activeelement 111, i.e., a waveguide core 113 and two cladding layers 114 and115. The cladding layers 114 and 115 may also be referred to as upperand lower cladding layers, respectively. The only difference in thelayers between the active and passive portions is that in the passiveportion 121, the layers are implanted with ions 129, as symbolized bysmall dots.

Note that in this embodiment, the entire cladding layers are implanted.However, in other embodiments, the entirety of the cladding is notimplanted, but only the portion that overlaps the waveguide mode, orwave confinement region. The wave confinement region is the region ofthe multi-layer structure where the supported optical mode isconcentrated. For purposes of this disclosure, the wave confinementregion is defined by the region in which optical intensity of asupported mode is greater than half of the peak intensity.

Also, note that the highly doped layer 117 and the metal contact 118 arenot necessary on the passive waveguide portion of the multi-layerstructure because the passive portion does not require electricalpumping. Because the layers 113, 114, 115 are ion implanted in thepassive portion 121 of the structure, their electrical conductivity isvery low, and the flow of electrical current is limited to the layers113, 114, 115, 116, 117, and 118.

It should be noted that power amplifier 111 may also be called an“active portion” of the multi-layer semiconductor structure. Further,the multi-layer semiconductor structure that includes power amplifier111 and passive waveguide 121 may be referred to herein as a“semiconductor” structure, even though it may include one or moreconducting or partially conducting layers such as 117 and 118. Further,the quantum cascade layer 113 may still be referred to as a quantumcascade layer or structure, even if it is substantially devoid of freecharge carriers or if it has been rendered substantially depleted offree charge carriers by, for example, ion implantation.

FIG. 2C shows a schematic cross section view through the power amplifier111, which includes QC gain medium 113, two cladding layers 114, 115, aswell as a highly doped contact and plasmon layer 117 grown on asubstrate 116. Electrical connection to the active element 111 isprovided by two metallic contacts 118 a, 118 b. The geometry of theactive element 111 is preferably that of a buried QC heterostructure,i.e., an etched ridge (width between 3 μm and 25 μm) surrounded by twoFe-doped InP layers 112 a, 112 b, which provide electrical insulationand improve the lateral heat dissipation from the waveguide core 113. Incertain embodiments, it may be desirable to replace the layers 112 a,112 b with a thin insulator such as Si₃N₄ or SiO₂. The wave confinementregion 119 is where a supported optical mode is concentrated, defined asthe region of the optical mode within the points where the opticalintensity of the supported mode is 50% of the maximum. The opticalintensity of the supported mode is greatest in the center of the ovalline 119, and oval line 119 marks the position where the opticalintensity falls to 50% of the maximum.

FIG. 2D shows a schematic cross section view through the passivewaveguide 121, which includes a QC layer 123 and two cladding layers124, 125 grown on a substrate 126. These layers are implanted with ions,129 at a concentration sufficient to significantly reduce thefree-carrier concentration. Note that the entirety of the cladding doesnot need to be implanted in some embodiments, but just the portion 119in which the optical mode is concentrated. The geometry of this passiveelement 121 is preferably that of a buried QC heterostructure, i.e., anetched ridge (width between 1 μm and 25 μm) surrounded by two Fe-dopedInP layers 112 a, 112 b.

Protons and Iron (Fe) are the preferred ions for implantation, but otherions are also possible. Fe implantation inserts Fe ions into thesemiconductor structure, such that upon thermal annealing, the Fe ionsare incorporated into the semiconductor's crystal lattice. Fe that isincorporated into the crystal lattice is known to result in a deepenergy level at approximately 0.65 eV below the conduction band edge inInP. Fe also forms deep levels in the other materials that comprise a QCstructure. With a sufficiently high concentration of incorporated Fe,the mobile electron concentration in InP can be reduced to <10¹⁰ cm⁻³.

The Fe ions are stable with respect to high-temperature processes thatmay subsequently occur during fabrication of the QC structure, such as ahigh-temperature material re-growth step. Other ions are also known tocreate deep electronic levels in the semiconductors that comprise a QCstructure. These include, but are not limited to, the transition metalssuch as Cr, Co, Ni, Ti, and V. Protons, on the other hand, result indeep levels by damaging the semiconductor crystal lattice to createvacancies and other defects. These defects result in a range of trapenergies that fall roughly between 0.1-0.3 eV below the conduction bandedge. These deep traps are not as deep as those afforded by Fe, but aresufficiently deep to reduce the free charge carrier (or mobile carrier)concentration to levels that are useful for fabricating passivewaveguides.

One limitation associated with using these damage-related defects forcreating the passive waveguide is that the defects can be repaired via athermal annealing process. Such annealing occurs at temperatures >˜500 Ksuch that subsequent processes in the fabrication of the MIR PIC shouldremain below this temperature. Nevertheless, this is still consistentwith reliable operation of MIR PICs at temperatures up to at least 400K. It should be noted that almost any ion can be used to create thesedamage-related deep levels. Proton implantation is particularlyattractive because their low mass allows them to be implanted verydeeply into the semiconductor.

Finally, it should be noted that there may be other physical processesbesides those discussed above to create deep traps. The above discussionis not meant in any way to restrict the mechanism by which ionimplantation can be used to create deep levels in the semiconductorlayers that comprise the QC structure. It may, in fact, be necessary toimplant multiple ion species to achieve the desired effects. Further,free charge carriers may be depleted by, for example, diffusing atomsinto the semiconductor layers.

Embodiments of the invention disclosed herein are particularlyattractive for the fabrication of passive waveguides integrated withactive QC structures for several reasons. First, ion implantation allowsthe QC layer and cladding layers of a QC structure to be transformedinto optically transparent and electrically insulating regions.

Second, the coupling losses between the QC structure and integratedpassive waveguide are negligible because (i) the passive and the activeportions of the wave confinement (or waveguide) region share the samelower cladding layer and QC layer, and possibly the same upper claddinglayer and (ii) the refractive index difference between the implanted andthe initially-doped layers is small. Third, ion implantation isinexpensive, reliable, compatible with the fabrication of QC structures,and requires only a minimal number of additional steps.

Related Prior Uses of Ion Implantation

Embodiments of the invention described herein rely on ion implantation,which is a well-known method used during the fabrication of a number ofelectronics and optoelectronic devices, mainly for the purpose ofrealizing passive waveguides or forming electrically insulating and/orconductive regions on a semiconductor chip. For example, in the methoddescribed in Naik et al., U.S. Pat. No. 4,521,443, nitrogen ions wereimplanted in a silicon dioxide substrate and annealed. In the regionswhere nitrogen was implanted, the interaction of the nitrogen ions withthe silicon dioxide led to an increased refractive index, which can beused to produce an optical waveguide.

Similar methods based on ion implantation exist to fabricate waveguidesin other material systems. For example, Ti ions can be used to produceoptical waveguides in LiNbO₃ according to the method described inAppleton et al., U.S. Pat. No. 4,840,816.

Ion implantation is also used commonly to dope, i.e., to significantlyincrease the concentration of donors or acceptors, in specific regionsof semiconductor devices in order to create regions with a specificconductivity type. Payne et al., U.S. Pat. No. 4,684,971, is an exampleof how ion implantation can be used to form n-type and p-type regions tocreate source and drain regions in CMOS field effect transistors andother devices.

Ion implantation is also frequently used to create an electricallyinsulating layer for inter-device isolation, dark-current reduction andother purposes. The method known as SIMOX (Separation by implantedOxygen) consists of implanting oxygen ions in silicon and annealing thesample to form an insulating SiO₂ layer, as described, for example, inFujioka, U.S. Pat. No. 5,061,642. This method is an example of a widelyused technique to produce semiconductor on insulator (SOI) substrates,which are very important to modern electronics.

A different method to form an electrically insulating layer in asemiconductor device is to implant ions known to create deep electron orhole traps through, for example, the formation of crystal defects.Proton (H+) and Iron ions (Fe+) can, for instance, be used to createinsulating layers in InP, as discussed in Boudinov et al., Nucl. Instr.Meth. Phys. Res. B, 175 235 (2001). The main effects of this type ofimplanted ions are to reduce the number of free carriers that canparticipate to an electrical current as well as to limit the mobility ofthe carriers. Both effects can lead to a significant increase inresistivity in the implanted region.

Ion implantation has been extensively used to shift the bandgap ofsemiconductor heterostructure as discussed, for example, in Wan et al.,Nucl. Instr. Meth. Phys. Res. B, 106 461 (1995) and Elman et al., U.S.Pat. No. 5,238,868 and the references therein. In this particular case,ion implantation and the subsequent thermal annealing of the sampleresult in compositional disordering and intermixing of the twoirradiated materials forming the barrier and the quantum wells of theheterostructure. The compositional disordering and intermixing lead to acontrollable and spatially selective increase of the bandgap (blueshift)in some layers of the implanted heterostructure compared to the bandgapof the unmodified material as described previously. This blueshift isgenerally large enough to render a waveguide or a region formed in theimplanted region transparent to the light emitted by a laser formed fromthe unimplanted material. This selective tuning technique is veryimportant for monolithic PICs based on interband optical transitions,i.e., PICs consisting of elements such as diode lasers, photodiodes etc.as it allows the monolithic integration of transparent waveguides orother low-loss optical elements with active elements such as lasers,amplifiers, photodetectors etc.

Ion implantation has also been used in the past in the context ofquantum cascade laser (QCL) technology. QCLs (see, e.g., C. Gmachl etal., IEEE J. of Quantum Electron. 38, 569 (2002) and the referencestherein) are the most widely used semiconductor laser sources in the MIRportion of the electromagnetic spectrum. However, proton implantationhas been used as a means to confine current to specific regions of a QCLridge by implanting the areas where current flow was not desired, asexplained in detail in Page et al. IEEE J. of Quantum Electron. 40, 665(2004), Faugeras et al., IEEE J. of Quantum Electron. 40, 665 (2004) andSemtsiv et al., IEEE J. of Quantum Electron. 42, 490 (2006). Similarly,Fe implantation was used to increase the electrical resistance near theQCL facet to allow deposition of metal coating without electricallyshorting the device, as detailed in Wienold et al., Electronics Lett.44, (2008). However, the ion implantation step only achieved making partof a QCL electrically insulating.

Ion implantation was also proposed in the context of QCL technology forthe realization of Bragg gratings for single-mode operation as explainedin, for example, Page et al., U.S. Patent Publication No. 2005/0249473and Corzine et al., U.S. Patent Publication No. 2006/0215720 A1. Inthese implementations, the refractive index change necessary to form theBragg grating is obtained by inducing a change in the carrierconcentration in highly doped layer via ion implantation. This change incarrier concentration corresponds to a change in refractive indexthrough the so-called plasma-resonance effect and can be large enough toobtain single-mode emission.

These ion-implantation methods applied to QCLs did not achieve creationof optically low-loss waveguide or wave confinement regions, nor wasthat their goal, and these prior methods are very different fromembodiments of the invention disclosed herein.

Fabrication Processes

In this section, several possible methods for fabricating passivewaveguides from a QC structure will be described. Note that the specificprocessing steps described are representative of embodiment fabricationapproaches and are not intended to limit the approaches that arepossible for creating passive waveguides from QC material using ionimplantation.

FIG. 3 shows a graph plotting and comparing ion-implantation penetrationdepth of protons and Fe ions into InP as calculated using the TRIMsoftware (www.srim.org). The penetration depth into the other materialsthat comprise a QC structure (such as InGaAs and InAlAs for InP-based QCstructures, or AlGaAs and InGaAs for GaAs-based QC structures) will bevery similar to that for InP. FIG. 3 demonstrates that for a givenimplantation energy, protons penetrate much more deeply than Fe becauseof their lower mass. At an energy of 1 MeV, for example protons and Feions have a penetration depths of >10 μm and 0.6 μm, respectively. Byincreasing the implantation energy to 10 MeV (which is a value that isobtainable from some facilities within the U.S.), Fe can be implanted toa depth of up to about 4 μm.

Since a total thickness of a QC structure can be on the order of 10 μm,it can be seen from FIG. 3 that proton implantation can be used toconvert the entire structure into an optically low-loss structure withno subsequent material re-growth steps. However, it is likely notpossible to convert the entire QC structure using Fe implantationwithout subsequent material growth and additional implantation becauseof its limited penetration depth. An exception to this may be madepossible through the use of channeling along particular crystalorientations, such as along the [100] direction, to increase theimplantation depth beyond those calculated using TRIM.

In order to distribute the implanted ions approximately uniformlythroughout the structure, multiple implants at different energies may berequired. Multiple implants of different energies and doses performedduring the same fabrication step will be termed an “implantationschedule.”

FIG. 4 shows a typical implantation schedule for implanting Fe such thatits concentration in the InP is approximately ˜10¹⁸CM⁻³ from the surfaceto a depth of ˜2 μm. This involves multiple implants, as shown in table340. Individual doses 343 a-f correspond to individual implantationprofiles shown in curves 341 a-f, ranging from 50 keV to 3 MeV inenergy. In each implantation, the implantation dose is adjusted toachieve the approximately uniform overall profile 342. Similarconsiderations are involved when implanting protons or other ionspecies.

FIG. 5 shows a table 560 and graph 570 indicating the structure andrefractive indices of a typical InP-based QC structure that is grown onn-type InP. The active region typically consists of a superlattice ofalternating layers of InGaAs and InAlAs. A fraction of the layers thatcomprise the superlattice are doped n-type such that the averagefree-carrier concentration in the QC layer is on the order of 10¹⁶ cm⁻³.A representative thickness of the QC layer is 2 μm. On either side ofthe QC layer are 0.5 μm-thick InGaAs waveguiding layers that areincluded in this example structure to engineer the size of the opticalmode. These InGaAs waveguiding layers need not be included in otherembodiments. N-type InP cladding layers that are roughly 3.5 μm-thicksurround the active region and InGaAs waveguiding layers. The claddinglayers are typically doped n-type in the density range 10¹⁶-10¹⁷ cm⁻³.Towards the surface, above the upper cladding, heavily doped n-typelayers serve as plasmon confinement and contact layers. The doping inthese layers is typically >5×10¹⁸ cm⁻³.

Also included in FIG. 5 is a graph 560 showing the optical mode 575corresponding to this example QC structure at a wavelength of 9 μm. Theoptical mode 575 is concentrated in the QC layer 571, waveguiding layers572 a and 572 b, and the regions of the cladding layers 573 a and 573 bthat are closest to the QC layer 571. It should be noted that it may bepossible to use the substrate as a portion of the lower cladding,especially if its doping is consistent with low optical losses.

The peak normalized intensity 577 of the optical mode 575 is 1.0, whilethe half-peak intensity 578 is 0.5. A wave confinement includes thecenter of the optical mode 575 extending outward to the positions wherethe intensity drops to 50%.

FIG. 6 is a graph plotting the calculated absorption coefficient in InPversus electron concentration for the two wavelengths 5 μm and 9 μm. Ifthe electron concentration in the optical waveguide can be made <10¹⁵cm⁻³, then the absorption coefficient of those layers will be <0.02 cm⁻¹and <0.2 cm⁻¹ for the wavelengths 5 μm and 9 μm, respectively. Evenlower carrier concentrations are desirable to achieve even lower losses.

Note that as used in this application, “passive” or “optically” passiveindicates that loss is significantly below the loss that would beincurred in an “active” portion of a QC structure having a density offree charge carriers high enough to produce gain in the QC layer. Forexample, absorption coefficients 0.02 cm⁻¹ and <0.2-cm⁻¹ for thewavelengths 5 μm and 9 μm, respectively, shown in FIG. 5 are exampleabsorption coefficients that qualify a portion to be considered“passive,” and even higher absorption coefficients can qualify.

Since the passive waveguides are to have as low loss as possible, allsources of optical loss should be minimized below the levels that aregenerally considered acceptable for the QC structures themselves. Thisinvolves the following considerations:

-   -   a) The implantation process should significantly reduce the        mobile carrier concentration in the QC layer and any surrounding        waveguiding and cladding layers, particularly the layers within        the wave confinement region. A reduction in carrier        concentration by >10×, to the range <10¹⁵cm⁻³, may be sufficient        for most purposes. It is especially important to reduce the        carrier concentration in the QC layer because the loss there is        due to both inter-subband and free-carrier absorption, with        inter-subband absorption having the potential for being larger        than free-carrier absorption. Since both of these are        proportional to the free-carrier concentration, reducing the        free-carrier concentration in the QC layer will reduce both        absorption mechanisms.    -   b) Free-carrier absorption in the substrate must be minimized if        the lowest possible absorption is desired, as this absorption        can result in significant loss within the context of low-loss        passive waveguides. This can be achieved, for example, by        growing the QC structure on a low-doped substrate, increasing        the thickness of the lower cladding layer, or through a        combination of these two approaches.    -   c) Loss due to free-carrier absorption in the plasmon/contact        layers can also be significant since these layers are heavily        doped. It is unlikely that an implantation process can        sufficiently reduce the carrier concentration in these layers.        Therefore, in embodiments requiring very low loss in passive        portions of the multi-layer structure, the Plasmon and/or        contact layer can be removed by etching them away, for example,        in an intended passive portion of the structure. In cases in        which these layers are removed, they can be replaced by a        low-loss film such as a low-loss dielectric material. The film        (such as SiO₂, SiN_(x), YF₃, InP, etc.) can consist of a        material that has low losses at the wavelengths of interest and        that can be easily deposited using methods known in the art        (such as material re-growth, electron-beam deposition,        sputtering, chemical vapor deposition, and so forth).    -   d) Masking of the active portions of the chip to protect these        portions from being implanted can be achieved in different ways.        It can involve depositing masking layers onto the chip itself        (for example, using photoresist, metals, dielectrics, or        combinations thereof) or patterned masks that are placed in        proximity of the chip during the implantation process. The        advantage of proximity masks is that they can be relatively        thick (>10 μm.) and provide efficient masking against the high        energy (MeV-class) implantations that may be necessary. A        drawback of proximity masks is that they likely cannot be        defined and aligned to the chip with the precision of deposited        masks that are enabled by standard semiconductor        photolithographic techniques.

FIGS. 7A-7D show four example processing sequences for multi-layerquantum cascade structures with active and passive portions. Each of thefour example processing sequences includes two correspondingcross-sectional views illustrating the multi-layer structures atdifferent stages of processing. The multi-layer QC structures in theseexamples include a substrate layer 616, a lower cladding layer 615, anactive (or quantum cascade) layer 613, an upper cladding layer 614, anda plasmon/contact layer 617. The “active portion” of the multi-layerstructure is the portion configured to be operable as an opticallyactive quantum cascade device (current can flow through the QC structureand provide optical gain for the waveguide mode). Note that duringoperation, the current flowing in the active portion of the device doesnot necessarily need to be in a current range in which the QCL gainmedium provides gain. For certain applications or devices, this currentcan have a lower value at which the structure does not provide gain. Thecurrent level can, however, be large enough to provide enough Jouleheating resulting in a useful increase of temperature in the device.This the active portion of the multi-layer structure, which is capableof producing gain, can be operated as active device even if current isbelow a gain threshold. The “passive portion” of the multi-layerstructure is characterized by the portion configured to be operable asan optically passive low-loss waveguide or other passive device. Thelayers in the “passive portion” of the structures need not be perfectlyoptically passive, but rather only substantially optically passive suchthat there is a low level of loss. In the passive portions, thestructure is substantially non-conductive such that current cannot flowthrough the QCL structure.

Example Process #1: Single-Schedule Proton Implantation

An example of a processing sequence that involves a single implantationschedule of proton implantation is described. As shown in FIG. 7A, #1,after growth of the completed QC epitaxial structure and after anyhigh-temperature process such as material re-growth to create buriedheterostructure devices, the plasmon/contact layer 617 is etched away inthe passive portion of the structure, and a schedule of protonimplantation is executed in the passive portion of the multi-layerstructure intended to become a passive waveguide. In other embodiments,the Plasmon/contact layers are not removed. Since protons can beimplanted very deeply, the optical waveguide can substantially beconverted to have low loss through the depletion of electronic carriers.

Alternatively, the implantation schedule can proceed with theplasmon/contact layers intact, but then these layers can be removedduring a subsequent etching process. In other embodiments, thePlasmon/contact layer is not removed at all. In embodiments in which itis removed, a low-loss dielectric material, for example, may then bedeposited onto the implanted region to shield the optical mode fromlosses at the surface. At this point, additional processing steps suchas device bonding can take place provided their processing temperaturedoes not anneal out the defects caused by the proton implantation andthereby significantly increase the carrier concentration in theselayers.

Example Process #2: Multiple-Schedule Fe Implantation

A second example process sequence, shown in FIG. 7B, involvesmultiple-schedule Fe implantation. Multiple-schedule Fe implantationsmay be necessary because of the limited implantation depths that arepossible with Fe, as illustrated in FIGS. 3 and 4. For 10 MeV implants,for example, the penetration depth is ˜4 μm, whereas the QC structurehas a thickness of ˜10 μm.

In process sequence #2, the QC epitaxial material is grown up throughthe QC layer. Prior to growing the upper cladding layer 614, and theplasmon/contact layer 617, a first Fe implantation schedule 621, FeImplant #1, is performed where the passive waveguide will be fabricatedin the passive portion of the structure. Fe ions are implanted into theactive and lower cladding layers 613 and 615, respectively, where thepassive waveguide will be fabricated in the passive portion of thestructure. After Fe Implant #1, the upper layers 614 and 617 are grown,and then the plasmon/contact layer 617 is etched away in the passiveportion of the structure, and the second Fe implant schedule 625, FeImplant #2, is performed.

The Fe that was deposited using the first implantation schedule 624 willbe at least partially activated through incorporation into the crystallattice during the high-temperature re-growth step. The Fe ionsdeposited during the second implantation schedule 625 must be thermallyannealed in a process step to activate these ions. This annealing stepcould take place during a second re-growth step of Iron-doped Indiumphosphide (Fe:InP) to create buried heterostructure (BH) QC structuresor in a dedicated annealing step. Fabrication of the MIR PIC cancontinue using standard fabrication methods. As in Example Process #1,it may be desirable to deposit a low-loss dielectric above the implantedregions to shield the optical mode from losses at the surface.

Although only two implantation schedules are described in processsequence #1, other processes can include three or more implantationschedules. It may be necessary to carry out multiple implantationschedules depending upon the thicknesses of the epitaxial layers thatcomprise the QC structure. Also, it should be noted that structures suchas buried gratings may be required for QC structure fabrication forcertain devices such as DFB QCLs or filters, for example. At the time ofthe first implantation schedule, when the semiconductor material that isclose to the QC layer is exposed to ion implantation, etching of buriedgratings and other such structures can be performed as necessary.

Example Process #3: Fe Implantation Plus Fe:InP Re-Growth

A third example process sequence, shown in FIG. 7C, involves an Feimplantation schedule 624 and subsequent re-growth 626 of Fe:InP uppercladding layers. Example Process #3 is similar to Example Process #2 inthat the QC epitaxial material is grown up through the active layer 613,but prior to growing the upper cladding layer 614. In the passiveportion of the structure, where the passive waveguide will befabricated, a first Fe implantation schedule 624 is performed to depositFe ions into the active and lower cladding layers 613 and 615,respectively, in the passive portion of the structure. Then the uppercladding 614 for the QC structure is re-grown. In the passive portion ofthe structure corresponding to passive waveguide, these active and lowercladding layers 613 and 615 are removed and Fe:InP 626 is re-grown toserve as the upper cladding in the passive portion of the structure.Since the plasmon/contact layer 617 is not re-grown in the passiveportion during this step, there is no need for an etching step to removeit. Nevertheless, as with Example Process #1, it a low-loss dielectriccan optionally be deposited above the re-grown Fe:InP 626 upper claddingto shield the optical mode from losses at the structure surface.Fabrication of the MIR PIC can then continue using standard fabricationmethods.

It should be noted that this Fe:InP re-growth step can be dedicated forre-growth of the upper cladding of the passive waveguides. However, itmay also be possible to simultaneously create BH devices in which theFe:InP (which serves as the upper cladding of the passive waveguides) isalso re-grown on the sidewalls of the ridges that form the lateralwaveguides for both the active and passive devices.

Example Process #4: Fe Implantation Plus Proton Implantation

A fourth example process sequence, shown in FIG. 7D, involves both Feand proton implantation. Example Process #4 is similar to ExampleProcess #2 in that the QC epitaxial material is grown up through theactive layer 613, but implantation is performed prior to completinggrowth of the upper cladding layer 614. In the passive portion of thestructure, where a passive waveguide will be fabricated, a first Feimplantation schedule 624 is performed to deposit Fe ions into theactive and lower-cladding layers 613 and 615, respectively. Then theupper layers 614 and 617 are re-grown and the plasmon/contact layer 617is etched away in the passive portion of the structure. Following theetching, protons are implanted into the upper cladding layer 614 toconvert the layer into low-loss material in the passive portion of thestructure. In other embodiments, it is desirable to implant protonsthrough the entire waveguiding region, extending into the lowercladding. The implantation of protons must occur after anyhigh-temperature steps in the process.

One purpose of including Example Process #4 is to illustrate thatdifferent ions can be used at different stages of embodiment processesto facilitate fabrication of low-loss waveguides.

Expected Performance

Optical loss calculations have been performed for structures that havebeen converted into passive waveguides using the Example Processes #1-#4described above. These optical loss calculations indicate that the losscan be low enough for practical applications. For QC devices operatingat λ˜5 μm, the modal absorption coefficient due to free-carrierabsorption in the active portion is calculated to be on the order of ˜1cm⁻¹. After conversion to a passive low-loss waveguide, the calculatedlosses are <0.03 cm⁻¹ assuming that the residual free-carrierconcentration in the implanted regions is <10¹⁵ cm⁻³. These calculationsimply an 85% power transmission through a 5-cm-long waveguide. Evenlower free-carrier concentrations are expected based on the resultspresented in [Semtsiv et al., IEEE J. of Quantum Electron. 42, 490(2006)] for proton implantation.

At longer wavelengths, the waveguide losses will be higher because ofthe larger optical mode size and also because of the strong increase infree-carrier absorption with wavelength as shown in FIG. 6. For awavelength of λ=9 μm, calculations indicate that the modal waveguideloss in passive low-loss waveguides based on typical QC structures canbe <0.5 cm⁻¹. These loss levels, although higher than at λ=5 μm, wouldstill enable a wide variety of MIR PICs.

Embodiments of the invention are not limited to depleting a waveguidingregion of a QC structure of free charge carriers to render the regionpassive. Semiconductors having a QC-type structure can initially formedto be devoid of free charge carriers. Ion implantation, for example, canbe used to increase a density of free charge carriers in a portionintended to become active. Thus, a device with a QC structure caninitially be configured to be passive and be operable, for example as awaveguide or another of the passive devices described above.Subsequently, a region of the QC structure such as a region of a QClayer in a semiconductor can be subjected to ion implantation using ionspecies such as those described above to enhance a density of freecarriers to create a gain medium for a laser, and amplifier, or otheractive QC device.

Furthermore, embodiments are not limited to QC-based PICs including bothactive and passive devices. Methods, and corresponding devices, caninclude initially forming a QC-based structure to be passive or active,based on an initial density of free charge carriers, as described above.However, a portion of the QC structure may be substantially modified tomake the portion capable of a different degree of gain or loss. Forexample, two active devices such as a QC laser and a QC amplifier may beoptimized with two different densities of free charge carriers or twodifferent degrees of optical gain. Thus, two active devices such as theQC laser 101 and the QC amplifier 111 shown in FIG. 2A may bemonolithically integrated by initially forming a QC structure to becapable of producing a particular gain reflecting a need for one of thedevices. Afterwards, ion implantation, for example, may be used in aportion of the QC structure to either increase or decrease the densityof free charge carriers in the portion of the structure intended to beoperable for the other device.

While this invention has been particularly shown and described withreferences to example embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade therein without departing from the scope of the inventionencompassed by the appended claims.

What is claimed is:
 1. A device comprising: an integrated multi-layersemiconductor structure comprising an active portion and a passiveportion, the multi-layer structure further comprising a wave confinementregion, including a quantum cascade layer, the wave confinement regionextending into the active and passive portions of the structure, thequantum cascade layer within the wave confinement region in the activeportion of the structure having a density of free charge carrierssufficient to produce optical gain in the quantum cascade layer in awavelength spectrum, and the quantum cascade layer within the waveconfinement region in the passive portion of the structure having lowloss in the wavelength spectrum and being substantially devoid of freecharge carriers.
 2. The device of claim 1, wherein the quantum cascadelayer within the wave confinement region in the passive portion of thestructure is substantially devoid of free charge carriers by ionimplantation.
 3. The device of claim 2, wherein the quantum cascadelayer within the wave confinement region in the passive portion of thestructure is substantially devoid of free charge carriers by ionimplantation of ions of at least one of Hydrogen, Iron, Helium, Oxygen,Chromium, Cobalt, Nickel, Titanium, Vanadium, Silicon, Sulfur, Selenium,Tellurium, Tin, Zinc, and Carbon.
 4. The device of claim 1, wherein adensity of the free charge carriers in the quantum cascade layer withinthe wave confinement region in the passive portion of the structure isless than about 10¹⁵ cm⁻³.
 5. The device of claim 4, wherein the densityof the free charge carriers in the quantum cascade layer within the waveconfinement region in the passive portion of the structure is less thanabout 10¹⁰ cm⁻³.
 6. The device of claim 1, wherein the active portion ofthe multi-layer structure is configured to include at least one of alaser, a distributed feedback laser, an amplifier, a master-oscillatorpower amplifier, a switch, a modulator, a phase shifter, and a detector.7. The device of claim 1, wherein the passive portion of the multi-layerstructure is configured to include at least one of a waveguide, arouter, a splitter, a combiner, a coupler, a phase shifter, amultiplexer, an interferometer, a filter, a modulator, a switch, and aresonator.
 8. The device of claim 1, wherein the wavelength spectrum isin the mid-infrared wavelength region.
 9. The device of claim 1, whereinthe quantum cascade layer within the wave confinement region of thepassive portion of the structure is configured to include energeticallydeep trap levels.
 10. The device of claim 1, wherein the quantum cascadelayer within the wave confinement region in the passive portion of thestructure is substantially devoid of free charge carriers by atomdiffusion.
 11. A method comprising: forming an integrated multi-layersemiconductor structure including a wave confinement region comprising aquantum cascade layer, the quantum cascade layer within the waveconfinement region having a density of free charge carriers sufficientto produce optical gain in the quantum cascade layer in a wavelengthspectrum; and configuring a portion of the wave confinement region to bea passive portion by substantially depleting the quantum cascade layerwithin the portion of the wave confinement region of free chargecarriers to have low loss in the wavelength spectrum, a remainingportion of the wave confinement region other than the passive portioncomprising an active portion of the wave confinement region.
 12. Themethod of claim 11, wherein substantially depleting the quantum cascadelayer within the portion of the wave confinement region of free chargecarriers comprises implanting ions into the layer.
 13. The method ofclaim 12, wherein implanting ions comprises implanting ions of at leastone of Hydrogen, Helium, Oxygen, Iron, Chromium, Cobalt, Nickel,Titanium, Vanadium, Silicon, Sulfur, Selenium, Tellurium, Tin, Zinc, andCarbon.
 14. The method of claim 11, wherein substantially depleting thequantum cascade layer within the portion of the wave confinement regionof free charge carriers comprises depleting the layer to a free chargecarrier density less than about 10¹⁵-cm⁻³.
 15. The method of claim 14,wherein substantially depleting the quantum cascade layer within theportion of the wave confinement region of free charge carriers furthercomprises depleting the layer to a free charge carrier density less thanabout 10¹⁰ cm⁻³.
 16. The method of claim 11, wherein the multi-layerstructure comprises an active portion and a passive portion, the activeportion of the structure comprising the active portion of the waveconfinement region, and wherein forming the multi-layer structurecomprises configuring the active portion of the structure to include atleast one of a laser, a distributed feedback laser, an amplifier, amaster-oscillator power amplifier, a switch, a modulator, a phaseshifter, and a detector.
 17. The method of claim 11, wherein themulti-layer structure comprises an active portion and a passive portion,the passive portion of the structure comprising the passive portion ofthe wave confinement region, the method further comprising configuringthe passive portion of the multi-layer structure to include at least oneof a waveguide, a router, a splitter, a combiner, a coupler, a phaseshifter, a multiplexer, an interferometer, a filter, a modulator, aswitch, and a resonator.
 18. The method of claim 11, wherein thewavelength spectrum is in the mid-infrared wavelength region.
 19. Themethod of claim 11, wherein configuring the portion of the waveconfinement region to be a passive portion comprises configuring thequantum cascade layer within the portion of the wave confinement regionto include energetically deep trap levels to trap the free chargecarriers.
 20. The method of claim 11, wherein substantially depletingthe quantum cascade layer of free charge carriers comprises diffusingatoms into the layer.
 21. The method of claim 11, wherein the active andpassive portions of the wave confinement region correspond,respectively, to active and passive portions of the multi-layerstructure, and wherein forming the multi-layer structure comprisesforming substrate, lower cladding, and upper cladding layers.
 22. Themethod of claim 21, wherein forming the multi-layer structure furthercomprises forming a contact layer, the method further comprisingremoving the contact layer in the passive portion of the multi-layerstructure.
 23. The method of claim 22, further comprising depositing alow-loss dielectric material onto the multi-layer structure in at leastpartial place of the removed contact layer in the passive portion of thestructure.
 24. The method of claim 21, further comprising implantingprotons into the lower cladding and upper cladding layers in the passiveportion of the multi-layer structure.
 25. The method of claim 21,wherein depleting the quantum cascade layer of free charge carrierscomprises implanting ions into the quantum cascade layer, the methodfurther comprising implanting ions into the lower cladding layer in thepassive portion of the multi-layer structure.
 26. The method of claim25, wherein forming the upper cladding layer follows implanting the ionsinto the lower cladding and quantum cascade layers.
 27. The method ofclaim 26, wherein forming the multi-layer structure further comprisesforming a contact layer, the method further comprising removing thecontact layer in the passive portion of the multi-layer structurefollowing forming the upper cladding and contact layers.
 28. The methodof claim 27, further comprising removing the upper cladding layer in thepassive portion of the multi-layer structure, the method furthercomprising growing a low-loss semiconductor material in at least partialplace of the removed upper cladding and contact layers.
 29. The methodof claim 26, further comprising, following forming the upper claddinglayer, implanting additional ions into the upper cladding layer in thepassive portion of the multi-layer structure to reduce loss in the uppercladding layer in the passive portion of the structure.
 30. The methodof claim 29, further comprising depositing a low-loss dielectricmaterial onto the upper cladding layer in the passive portion of thestructure after implanting the additional ions.
 31. A method comprising:forming an integrated multi-layer semiconductor structure including awave confinement region comprising a quantum cascade layer, the quantumcascade layer being substantially depleted of free charge carriers tohave low loss in a wavelength spectrum; and configuring a portion of thewave confinement region to be an active portion by increasing a densityof free charge carriers in the quantum cascade layer in the portion ofthe wave confinement region to a value sufficient to produce opticalgain in the quantum cascade layer in the wavelength spectrum, aremaining portion of the wave confinement region other than the activeportion comprising a passive portion of the wave confinement region. 32.The method of claim 31, wherein increasing the density of free chargecarriers comprises implanting ions into the quantum cascade layer in theportion of the wave confinement region.
 33. The method of claim 31,wherein the multi-layer structure comprises an active portion and apassive portion, the passive portion of the structure comprising thepassive portion of the wave confinement region, the method furthercomprising configuring the passive portion of the multi-layer structureto include at least one of a waveguide, a router, a splitter, acombiner, a coupler, a phase shifter, a multiplexer, an interferometer,a filter, a modulator, a switch, and a resonator.
 34. The method ofclaim 31, further comprising configuring an active portion of themulti-layer structure comprising the active portion of the waveconfinement region to include at least one of a laser, a distributedfeedback laser, an amplifier, a master-oscillator power amplifier, aswitch, a modulator, a phase shifter, and a detector.
 35. A methodcomprising: forming an integrated multi-layer semiconductor structureincluding a wave confinement region comprising a quantum cascade layer,the wave confinement region having first and second portions with aninitial density of free charge carriers in the quantum cascade layer;and modifying the initial density of free charge carriers in the quantumcascade layer within the second portion of the wave confinement regionto be substantially different from the initial density.
 36. The methodof claim 35, wherein the initial density of free charge carriers issufficiently low that the formed first and second portions of the waveconfinement region are passive in a wavelength spectrum, and whereinmodifying the initial density comprises increasing the initial densityin the quantum cascade layer in the second portion of the waveconfinement region to a level sufficient to produce optical gain in thequantum cascade layer in the wavelength spectrum.
 37. The method ofclaim 35, wherein the initial density of free charge carriers issufficiently high to produce optical gain in the quantum cascade layerin a wavelength spectrum, and wherein modifying the initial densitycomprises decreasing the initial density in the quantum cascade layerwithin the second portion of the wave confinement region to a level lowenough to render the second portion of the wave confinement regionpassive in the wavelength spectrum.
 38. The method of claim 35, whereinthe initial density of free charge carriers is sufficiently high toproduce an initial optical gain in the quantum cascade layer in awavelength spectrum, and wherein modifying the initial density comprisesmodifying the initial density sufficiently to produce a modified opticalgain in the quantum cascade layer in the second portion of the waveconfinement region in the wavelength spectrum, the modified gainsubstantially differing from the initial gain.
 39. The method of claim38, wherein the quantum cascade layer in the first portion of the waveconfinement region is formed to be operable as a quantum cascade lasergain medium, and wherein the quantum cascade layer in the second portionof the wave confinement region with the modified density of free chargecarriers is rendered operable as a quantum cascade amplifier gainmedium.
 40. The method of claim 35, wherein modifying the initialdensity of free charge carriers comprises implanting ions into thequantum cascade layer in the second portion of the wave confinementregion.